Laser annealed junctions: Pocket profile analysis using an atomistic kinetic Monte Carlo approach

In this study, we report on the device impact related to B pocket diffusion/deactivation using an atomistic kinetic Monte Carlo (KMC) diffusion modeling. An atomistic distribution of B-clusters in nFET channel region is shown. Spike-RTA scaling down to 1000°C for shallow extension formation induces about 10% of B pocket deactivation. KMC reveals that the dominant B-clusters in nFET channel region are BI
₂
, B
₃
I, B
₃
I
₂
and come from B pocket implants. B-clusters distribute around the tip of the extension and possibly have an influence on Vth variation. Laser annealing (LA) before spike-RTA improves the B pocket effectiveness and can reduce B pocket dose. This fundamental understanding of the LA impact on B pocket clustering enables us to improve the short-channel effect and Vth variation over a Spike-RTA reference.