Model for RTS noise in submicron MOSFETS

The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant τ
_c
on the drain current we can calculate x-coordinate of the trap position.