Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 dielectric

This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al
₂
O
₃
dielectrics studied in this paper. This paper also proposed for the first time unpinned Fermi level in GaSb MOS system with high-κ PEALD Al
₂
O
₃
dielectric using admittance spectroscopy and XPS analysis.