Developing a high volume manufacturing method to eliminate P Buried Layer implant defects

Atomic Force Microscopy, Deep Level Transient Spectroscopy and Secondary Ion Mass Spectroscopy were used to study defects created in the P Buried Layer while using a BF
₂
implant. The P Buried Layer defects were traced to the unintentional co-implantation of Mo along with the BF
₂
implant. Using a Tungsten source, instead of a Molybdenum source for the BF
₂
implant, reduced but did not eliminate these defects. A novel, high volume processing method was developed to produce metal contamination-free buried layers and verified by deep level transient spectroscopy spectra.