1200 V, 35 A SiC-BGSIT with improved blocking gain of 480

We succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the current rating of 35 A at the power density of 200 W/cm
²
. The saturation current exceeded 130 A. The breakdown voltage V
_BR
and the on-resistance R
_on
were 1200 V at the gate voltage V
_G
of -2.5 V and 26 mΩ at V
_G
of +2.5 V, respectively. The blocking gain of 480 was greatly improved compared with our previous work (~100) due to the optimization of the fabrication process, especially related to the channel formation. Considering the active area A of 6.76 mm
²
, we calculated the specific on-resistance R
_onA
as 1.8 mΩ·cm
²
, which is a lowest one among the SiC switching devices with V
_BR
>1200 V that have been reported up to now except our previous report on small chip BGSIT (A=0.853 mm
²
). The leakage current was less than 10
^-7
A at the drain voltage of 1000 V at room temperature and increased by only one order of magnitude at 200°C. The R
_on
increased from 26 mil at RT to 74 mΩ at 200°C.