New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge

A new vertical power MOSFET (VDMOS) structure with a Discontinuous Thick Inter-Body Oxide (DTIBO) is presented and experimentally analyzed in this paper. The new structure substantially reduces the Qgd*sRon figure-of-merit without excessive BVds penalization with respect to the conventional VDMOS. Moreover, the undesired hot-carried injection (HCI) effects are also assessed.