Optimization of the temperature dependence of the anode-side current gain of IGBTs by field-stop design

The temperature dependence of the anode-side current gain α
_pnp
of IGBTs is an essential criterion for the minimization of the total power losses of power-semiconductor devices. We propose a new method to reduce this dependence by using field-stop zones that contain doping atoms with deep levels in the band gap of silicon. Furthermore, we demonstrate that a deep-level doping of the field-stop significantly reduces the temperature dependence of the turn-off losses.