A new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE)

In this paper, a new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE) concept is presented which has been investigated by device simulation. The IDEE concept in combination with a Controlled Injection of Backside Holes (CIBH) cathode structure improves substantially the trade-off between surge current capability, turn-off losses and turn-off ruggedness. The IDEE diode is characterized by an anode-side highly doped p+-region, which is interrupted by n-doped channels. In contrast to conventional emitters, the IDEE anode region provides a low emitter efficiency at low currents and a high emitter efficiency at high currents. This feature leads to a reduced anode side plasma density and improved reverse recovery at low current densities; on the other hand the diode's surge current capability is significantly enhanced.