Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer

A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial layer structure is presented. A higher threshold voltage is achieved while keeping the on-state resistance low by using an AlGaN buffer instead of a GaN buffer. Additionally, the AlGaN buffer acts as a back-barrier and suppresses source-drain punch-through currents in the off-state. P-GaN gate GaN transistors with AlGaN buffer will therefore yield higher breakdown voltages as compared to standard GaN buffer versions which results in an excellent V
_Br
-to-R
_ON
ratio. The proposed normally-off technology shows save operation under elevated ambient temperature up to 200°C without thermal runaway. In contrast to standard Schottky-gate AlGaN/GaN HEMTs, a reverse diode operation is possible for off-state conditions which may enable improved inverter circuits.