A high performance 0.25 /spl mu/m logic technology optimized for 1.8 V operation

A 0.25 /spl mu/m generation logic technology has been developed with high performance transistors and five layers of planarized interconnect. The transistors are optimized for 1.8 V operation to provide high performance, low power and good reliability. The interconnects feature extensive use of planarization and high aspect ratio metal lines. 4 Mbit SRAMs with a 10.26 /spl mu/m/sup 2/ 6-T cell size have been built on this technology.