Recent advances in high voltage SOI technology for motor control and automotive applications

One of the drawbacks of the conventional high voltage SOI devices requires a thick buried oxide. In the present paper we propose a new high voltage SOI device structure which does not require a thick buried oxide. Second, we propose a method to reduce the chip size of high voltage power ICs by developing new LIGBTs, operating in a higher current density. Third, we demonstrate on-chip integration of MPUs, analog digital circuits and 60 V power NMOS for automotive applications.