A CAD-compatible non-quasi-static MOSFET model

We propose a novel non-quasi-static model for long-channel MOSFETs which removes the known problems with existing models, such as zero base current and bump features. In a fast switching case, this model reduces the r.m.s. error of I/sub s/, I/sub d/, I/sub g/, I/sub b/ from 22%, 136%, 85%, 100% for BSIM3 and 24%, 77%, 32%, 34% for the Turchetti model down to only 2.1%, 12%, 3.6% and 7.8%, respectively.