A new physics-based, predictive compact model for small-geometry MOSFET's including two-dimensional calculations with a close link to process and layout data

A new analytical, physics-based compact model for small-geometry MOSFET's is presented, which was derived under use of a specially developed two-dimensional technique for the solution of Poisson's equation together with a new way to solve for MOS current equations. Comparison of our model with numerical device simulations and measurements show an outstanding predictive ability.