Sputtered barium titanate films for capacitor applications

BaTiO/sub 3/ film prepared by RF sputtering was studied for capacitor applications. The films produced have a capacitance storage of 0.85 /spl mu/F/cm/sup 2/, with a high resistivity of 10/sup 14/ /spl Omega/-cm and low dissipation factor of 0.005. The dielectric constant of these BaTiO/sub 3/ films is approximately 30, which is superior to that of the typical polymer film capacitor and has little dependence on frequency. However, the breakdown strength of BaTiO/sub 3/ under the present condition is approximately 30 MV/meter which is about one order magnitude lower than expected. The theoretical breakdown strength of BaTiO/sub 3/ is reported to be as high as 200 MV/m. The processing of BaTiO/sub 3/ films must be optimized to obtain the potential benefit of the BaTiO/sub 3/.