Analysis of floating-body-induced leakage current in 0.15 /spl mu/m SOI DRAM

Summary form only given. Degradation of the dynamic retention time in SOI DRAMs is a critical issue in the application of SOI technology to memory devices. One possible degradation mode related with the floating-body effect occurs in a non-selected memory cell storing "1" due to a transient lowering of the threshold voltage (Vth) of the transistor associated with a voltage drop of a data line from a precharge level to 0 V. It was reported that this dynamism can induce a leakage current as high as several mA at low voltage regions. In this paper, the possibility of this degradation mode in a 0.15 /spl mu/m SOI DRAM cell is analyzed in detail considering various device parameters and the design guideline to avoid the degradation is described.