Feasibility study of VLSI device layer transfer by CMP PETEOS direct bonding

Reports here the first results of using plasma enhanced CVD TEOS (Si(C/sub 2/H/sub 5/O)/sub 4/) oxide (PETEOS) and associated CMP (Chemical Mechanical Polishing) technology to form a flat layer on the surface of a processed VLSI bulk Si wafer for direct bonding. The undoped PETEOS oxide has also been used as a bonding layer for substrates onto which the IC layer is to be transfered and whose surfaces are not favorable for bonding.