High-Performance MIM Capacitors Using Novel PMNT Thin Films

High-performance metal-insulator-metal (MIM) capacitors using novel Pb(Mg
_0.33
Nb
_0.67
)
_0.65
Ti
_0.35
O
₃
(PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-κ of 1115 (high capacitance density of 26 fF/μm
²
) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2 × 10
^-10
A/cm
²
and low loss tangent of 0.0188 are also obtained. The results indicate that high-κ PMNT is a promising candidate material for high-performance MIM capacitors.