A design procedure for monolithic matrix amplifier

A procedure for the design of monolithic matrix amplifier is proposed. A simplified expression for small signal gain based on unilateral field-effect transistor (FET) model is derived. In particular, the Design-Oriented FET model previously published is adopted. The introduction of a set of design charts allows the designer a fast and accurate prediction of low frequency gain and 3-dB cutoff frequency of a given matrix amplifier. Good agreement with experimental data and simulations confirms the validity of the proposed design method.