On-wafer S-parameter de-embedding of silicon active and passive devices up to 170 GHz

This paper compares for the first time open-short, split-through, and TRL de-embedding techniques for on-wafer characterization of silicon active and passive devices in the DC to 170 GHz range. It is demonstrated using transformers, capacitors, 65 nm MOSFETs and SiGe HBTs that, if the open and short dummies are designed to remain lumped through 170 GHz, there is almost no difference between the three de-embedding techniques. For transistor test structures with series ground inductance, a new TRL + short de-embedding method is proposed.