An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications

The fabrication process of an 80 nm In
_0.7
Ga
_0.3
As MHEMT device with flip-chip packaging on Al
₂
O
₃
substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I
_DS
= 425 mA/mm and high g
_m
= 970 mS/mm at V
_DS
= 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF
_min
)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In
_0.7
Ga
_0.3
As MHEMT device for low noise applications at W-band.