Thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser — Improved quantum efficiency operation

Based on a theoretical analysis of internal quantum efficiency of a thin-film GaInAsP/InP lateral current injection type Fabry-Perot laser prepared on the semi-insulating InP substrate, its fabrication process was modified. As the results, the internal quantum efficiency was improved by a factor of 2 and the waveguide loss was reduced to 2/3 in comparison with previously reported devices. A threshold current of 11 mA and an external differential quantum efficiency of 33% were obtained for the device with 720 μm-long cavity and 1.7 μm-wide stripe under a room temperature continuous-wave condition.