InGaAsN as absorber in APDs for 1.3 micron wavelength applications

Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm
²
at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al
_0.8
Ga
_0.2
As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al
_0.8
Ga
_0.2
As.