Numerical simulation of the avalanche breakdown process in pulse sharpening diodes

Summary form only given. This paper describes a method for the dynamic simulation of the avalanche breakdown process in silicon-based pulse sharpening diodes. The simulation uses commercially available software that incorporates SPICE3 for the circuit-simulation and numerical models for the critical devices. The numerical modeling of the critical devices in the circuit can be one or two dimensional and is based on the solution of Poisson's equation and the current-continuity equations. The program allows user specification of device geometry, doping levels, doping profiles, and external circuit parameters. This work is being performed in order to establish an educated starting point for fabrication of pulse sharpening diodes at UNM facilities. Results of the numerical simulation are provided. A comparison of the numerical simulation to experimental data is made.