0.13µm CMOS power amplifier for Wireless Sensor Network applications

This paper presents the design of a Class AB power amplifier (PA) for 2.4–2.4835GHz Wireless Sensor Network (WSN) system in 0.13µm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. The proposed PA achieves a power added efficiency (PAE) of 25.34% while delivering an output power of 7.92dBm with an input power of −9.08dBm at 1dB compression point. The simulated maximum power gain is 18.09dB. With a DC voltage supply of 1.2V, the power consumption is 22.0mW. The layout size is 960×1120µm
²
.