Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods

In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-µm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.