Studies of inductively coupled plasma source antenna symmetry and characterisation of an SiO/sub 2/ sputtering plasma

Summary form only given. Simulations of inductively coupled plasmas (ICPs) typically simplify the driving antenna by analyzing it as composed of symmetric rings. To investigate the effects of this approximation and to explore the performance of an ICP source with improved symmetry, an axisymmetric antenna design has been established. These antennae can be easily constructed with varied geometries and RF power intensity patterns. The characteristics of an ICP source driven by a standard "stove element" antenna are compared with those of an ICP source driven by the symmetric antenna configuration. Source optimization is then studied by using varying geometries of the symmetric antenna configuration. Initial results and comparisons with published simulations are presented. We also report initial results of a study of plasma damage mechanisms in the formation of sputtered MOS capacitors. MOS capacitors can be produced by depositing SiO/sub 2/ onto an Si substrate using a source such as a Kurt Lesker magnetron sputter source and then evaporating a metal film pattern over the SiO/sub 2/. The performance of these MOS capacitors depends both on the quality of the sputter deposition and any plasma inflicted collateral damage. The MOS capacitor performance can be analyzed using a graphical technique that identifies and classifies surface defect levels from the capacitor's C-V characteristics.