SPICE macro-model of magnetic tunnel nanostructure for digital applications and memory cells

This paper presents macro-model and circuit of a spin transfer torque magnetic tunnel junction (MTJ), implemented using two voltage-dependent resistances for parallel and antiparallel layer magnetization. Macro-model suitable for use in any circuit simulators, the problems previously encountered in the convergence of SPICE-like programs eliminated. The efficiency of the model is demonstrated for a MRAM memory, simulation results showed high accuracy and adequacy of the proposed macro-model.