Threshold Voltage and Mobility Extraction by Ultrafast Switching Measurement on NBTI

A simple but robust methodology for the extraction of threshold voltage (V
_t
) and hole mobility by ultrafast switching measurement on NBTI is demonstrated. It is shown that during the measurement of the linear drain current (I
_d
) versus gate voltage (V
_g
) curve by ultrafast switching, recovery can be constantly minimized at a very short delay (100 ns) and made independent of the aggregate I
_d
-V
_g
measurement time (~5 s). In conjunction with the Y -function method, V
_t
and mobility degradation can be straightforwardly and yet accurately examined over the same measurement voltage range. Moreover, their respective contributions toward p-MOSFET NBTI can clearly be delineated.