Fast electroplating TSV process development for the via-last approach

One of challenge for the 3D integration by the TSV approach is the electroplating. Electroplating quality and time are important parameters for TSV cost and application. Solid Cu filling TSV (Through Si Via) with via diameter 20 μm and 65 μm depth is achieved by the DC (directly current) electroplating within 40 minutes on 8 inch wafer.