GaN-on-Si power field effect transistors

GaN-on-Si has become the most promising technology for next-generation power switching devices to overcome intrinsic Si limits for high temperature operation, high efficiency at high operating voltage, and high switching frequency. Depletion-mode devices are already offering more than one order of magnitude lower specific on-resistance above 600V. Further, we have recently demonstrated e-mode devices (Vt > 0.5V) with high current density, thanks to a unique in-situ SiN passivation approach. This in-situ SiN layer is further shown to be a key parameter for device stability at elevated temperatures, significantly enhancing the device reliability in high temperature accelerated lifetime tests.