Modeling of Cu IMD-TDDB caused by extrinsic defects

In this paper, a prediction method for degradation failure ratio (B-mode) of Cu IMD-TDDB is studied. In this study, B-mode failure is assumed to be caused by dielectric thinning due to random defects (thinning model). Its probability is calculated by Critical Area Analysis (CAA). Prediction is in good agreement with measurement results. This method can be applied to estimate reliability of various LSI products.