Reliability studies on a 45nm low power system-on-chip (SoC) dual gate oxide high-k / metal gate (DG HK+MG) technology

In this paper, we present extensive reliability characterization results for a novel dual gate 45 nm HK+MG technology. BTI, HCI and TDDB degradation modes on the Logic and I/O transistors are studied and excellent reliability is demonstrated. Emphasis is placed on the importance of process optimizations to support robust I/O transistors while maintaining the high performance and reliability of Logic transistors. Monitoring of reliability for HVM and collateral reliability are also addressed.