Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs

Interface-trap effects are analyzed in inversion-type, self-aligned In
_0.53
Ga
_0.47
As and In
_0.53
Ga
_0.47
As/ In
_0.2
Ga
_0.8
As MOSFETs with ALD ZrO
₂
gate dielectric. Interface-trap densities in the order of 10
¹³
cm
^-2
eV
^-1
are required to explain the measured subthreshold slopes. For these D
_it
values, donor-like interface traps are compatible with threshold-voltage values in the 0-0.15 V range as those observed in these devices. Moreover, the presence of donor-like interface traps can explain the negative V
_T
shift induced by the inclusion of the In
_0.2
Ga
_0.8
As cap layer, as the result of the influence of interface traps located at the In
_0.2
Ga
_0.8
As/ZrO
₂
interface on the inversion channel forming at the In
_0.53
Ga
_0.47
As/In
_0.2
Ga
_0.8
As interface.