A new built-in self-test (BIST) for a RF low-noise amplifier (LNA)

In this paper, we present a new RF built-in self test (BIST) circuit for 865-870 MHz low noise amplifiers (LNAs); The BIST and LNA circuit is designed using 0.35 μm CMOS technology. The simple circuit of test that contains a RF peak detectors and two comparators brings high fault coverage. The faults simulating possible catastrophic and parametric faults are introduced. A total of twenty eight short and open faults and ten parameters variation have been introduced into the LNA, giving fault coverage of 89% for catastrophic faults and 90% for process variation.