Reliability evaluation of wafer-level-packaging AlSb/InAs HEMT receivers for light-weight and ultralow-power applications

Wafer-level-packaging (WLP) AISb/InAs HEMT receivers have been developed for lightweight and ultralow-power applications. To warrant successful insertion of WLP AISb/InAs HEMT receivers for military and space applications, highreliability demonstration is essential. In this study, we performed three-temperature lifetesting to evaluate the reliability performance of WLP AlSb/InAs HEMT receivers. For the first time, the high-reliability performance of WLP AISb/InAs HEMT receivers was demonstrated. The results show a median time to failure (MTF) of approximately I.98x10
⁶
hours at T
_junction
of 85 °C with activation energy (Ea) of approximately 1.87 eV. High-reliability performance is essential for successful insertion of WLP AISb/InAs HEMT receivers for military and space applications with light-weight and ultralow-power requirements.