A 3.4 GHz to 4.3 GHz frequency-reconfigurable class E power amplifier with an integrated CMOS-MEMS LC balun

A monolithically integrated differential class E power amplifier capable of dynamically switching between 3.4 GHz and 4.3 GHz operation has been designed and fabricated in a 0.35 μm BiCMOS process; this power amplifier also includes an integrated CMOS-MEMS variable capacitor enabled LC balun for differential to single-ended conversion. The power amplifier achieves a maximum output power of 19.1 dBm and a maximum power added efficiency of 15.1% with a supply voltage of 3.3 V.