Oxide HDP-CVD Modeling for Shallow Trench Isolation

A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run-to-run system in order to reduce the lot-to-lot variability (a lot equals 25 wafers). A model is developed to control the MeanThickness and the Range of the MeanThickness (uniformity). A satisfactory model was obtained through a design of experiments.