Study on palladium germanide on Ge-on-Si substrate for nanoscale Ge channel Schottky barrier MOSFETs

In this article, we investigated the fabrication and characteristics of Pd germanide Schottky contacts on n-type Ge substrate. It is shown that the lowest sheet resistance and uniform Pd germanide can be obtained by a one step RTP at 400°C for 30 sec. The proposed Pd germanide/nGe contact exhibited electron Schottky barrier height and work function of 0.565~0.577 eV and 4.695~4.702 eV, respectively. Therefore, the proposed Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.