31 GHz Static and 39 GHz Dynamic Frequency Divider ICs Using 0.2 μm-AlGaAs/GaAs-HEMTs

A static and a dynamic frequency divider based on enhancement and depletion 0.2 μm gate length AlGaAs/GaAs-HEMT (f
T
= 60 / 55 GHz) technology were designed and fabricated. High-speed operations up to 31 GHz and 39 GHz for the static and dynamic frequency divider, respectively, have been achieved. The single-ended input and differential output to ground simplify many applications. The power consumption is 400 mW using two supply voltages of 3.3 V and -2.5 V for the static divider, and 450 mW using 3.8 V and -2.5 V for the dynamic divider.