Horizontal p-i-n high-speed Ge waveguide detector on large cross-section SOI waveguide

We report a novel high-speed Ge photodetector on a large cross-section SOI waveguide platform. The device is butt-coupled with waveguide using a horizontal p-i-n junction configuration to enable highspeed operation. A very compact Ge detector with an active area of only 0.8 × 10 ¿m², greater than 32 GHz optical bandwidth at -1 V of reverse bias, and a responsivity of 1.1 A/W is demonstrated.