Room temperature CW laser diode at 485 nm

Since the first demonstrations of II-VI laser diodes, researchers have been working towards long lifetime room temperature CW devices. In this paper, we report improved room temperature CW lifetime (2.15 minutes) and device performance characteristics at an emission wavelength of 485 nm. The laser structure which was grown by molecular beam epitaxy (MBE) contained (Zn,Mg)(S,Se) cladding and waveguiding layers surrounding a single (Zn,Cd)(S,Se) quantum well.