A black box method for stability analysis of arbitrary SRAM cell structures

Static noise margin analysis using butterfly curves has traditionally played a leading role in the sizing and optimization of SRAM cell structures. Heightened variability and reduced supply voltages have resulted in increased attention being paid to new methods for characterizing dynamic robustness. In this work, a technique based on vector field analysis is presented for quickly extracting both static and dynamic stability characteristics of arbitrary SRAM topologies. It is shown that the traditional butterfly curve simulation for 6T cells is actually a special case of the proposed method. The proposed technique not only allows for standard SNM ¿smallest-square¿ measurements, but also enables tracing of the state-space separatrix, an operation critical for quantifying dynamic stability. It is established via importance sampling that cell characterization using a combination of both separatrix tracing and butterfly SNM measurements is significantly more correlated to cell failure rates then using SNM measurements alone. The presented technique is demonstrated to be thousands of times faster than the brute force transient approach and can be implemented with widely available, standard design tools.