Titanium-Substituted $\hbox{Bi}_{1.5}\hbox{Zn}_{1.0} \hbox{Nb}_{1.5}\hbox{O}_{7}$ for High-Density and Low-Temperature-Coefficient-of-Capacitance MIM Capacitor by Low-Temperature Process (300 $^{\circ}\hbox{C}$)

A high-density metal-insulator-metal (MIM) capacitor at 300°C with a titanium-substituted Bi
_1.5
Zn
_1.0
Nb
_1.5
O
₇
(BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi
_1.5
Zn
_0.5
)(Zn
_0.4
Nb
_1.3
Ti
_0.3
O
₇
) film has exhibited a high capacitance density of 14.8 fF/cm
²
at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm
²
at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V
²
and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.