Selective laser annealing for improved SiGe MEMS structural layers at 210°C

This work demonstrates, for the first time, the possibility of optimizing both electrical and mechanical properties of SiGe MEMS structural layers at low temperatures (< 250°C). Using selective laser annealing (LA), it is possible to reduce the strain gradient of SiGe films deposited at 210°C to -1.6×10
^-7
¿m
^-1
and the electrical resistivity can be as low as 2.83 m¿·cm.