A novel approach for modeling the threshold voltage of cylindrical Ion Sensitive Field Effect Transistor

There is an increasing demand of Biosensors many branch of science and technology. The Ion Sensitive Field Effect Transistor (ISFET) is one of the most essential components of ion sensing biosensor. ISFET is a field effect transistor having ion sensing capability. It has got countless potential to fabricate sophisticated sensing devices. In this article, an effort has been taken to ascribe the effect of the cylindrical shape over the sensitivity of ISFET. A reduce in threshold voltage has been noticed in the cylindrical ISFET as compared to that of the planer one. The present work highlights the change in threshold voltage of Planer and cylindrical ISFET with respect to pH.