Redistribution of Ion-Implanted Mercury During Rapid Thermal Annealing of Ga0.47 In0.53 As and InP

Rutherford backscattering (RBS) has been used to study the redistribution of ion-implanted mercury and the reordering of implantation damage during Rapid Thermal Annealing (RTA) of Ga
0.47
In
0.53
As epilayers and bulk InP. Implantation at 200°C prevents amorphous layer formation and reduces the extent of Hg redistribution in both materials. Si
3
N
4
and phosphosilicate glass (PSG) are compared as encapsulants for InP; it is suggested that silicon indiffusion enhanced by radiation damage may be the reason why p-type activity has only been seen for 200°C implanted material.