0.9 eV Potential Barrier Schottky Diode on 0.75-0.5 eV Gap Gax In1-x AS\a-Si:H\Pt

The I(V,T) curves of such structures for 1000 Å of a-Si:H and x = 0.2 and 0.47 are both similar to those of Pt/a-Si:H diodes, so controlled by the Pt/a-Si:H interface. This opens new perspectives for MESFET on Ga
x
In
1-x
As.