Process Dependence of Hole Trapping in Nitrided SiO2 Films

A systematic investigation of hole trapping in 20-30 nm nitrided oxides as a function of the nitridation conditions were performed using the avalanche injection technique. Nitridation carried out at relatively low temperatures (700-800°C) and for short times brings about an increase of hole traps. Hole trapping reduction can only be achieved for more severe nitridation conditions. The effect of postnitridation annealing in oxygen was also studied.