Higher Efficiency of CMOS-Process-Compatible Photodiodes in SOI-Technique by Reflecting Films

A voltage of several volts was achieved on chip by integration of photodiodes in polycristalline silicon layers in SOI-technique. For increased quantum efficiency suitable layers were deposited at the Si - poly-Si boundary. These layers caused no restrictions for successing process steps and temperature treatments. A comparison of measured quantum efficiencies with theoretical values has been made.