Statistical Measurements of PMOS Subthreshold Current for 1.3 to 0.5 Micron Channel Lengths

The threshold voltage and subthreshold current of micron and submicron PMOS devices have been investigated for both a classical n - well and a retrograde n - well process. The two processes show similar threshold voltage characteristics down to 0.5 micron but the subthreshold current is much improved for the retrograde process.